Specification	SQJ868EP-T1_GE3

Current - Continuous Drain (Id) (Tc)	58 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	55 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	2450 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	48 W
Qualification	AEC-Q101
Rds On (Max)	7.35 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

SQJ868 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Rds On (Max)	Grade	Package / Case	Vgs(th) (Max)	Vgs (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Package Name	Qualification	Mounting Type	Power Dissipation (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)
Vishay Dale SQJ868EP-T1_GE3	-55 °C	175 °C	MOSFET (Metal Oxide)	7.35 mOhm	Automotive	PowerPAK® SO-8	3.5 V	20 V	55 nC	40 V	2450 pF	PowerPAK® SO-8	AEC-Q101	Surface Mount	48 W	N-Channel	58 A	10 V

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