Specification	IPB03N03LB

Current - Continuous Drain (Id) (Tc)	80 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	59 nC, 59 nC
Input Capacitance (Ciss) (Max)	7624 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3
Power Dissipation (Max)	150 W
Rds On (Max)	2.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

IPB03N Series

Part	FET Type	Input Capacitance (Ciss) (Max)	Mounting Type	Vgs (Max)	Vgs(th) (Max)	Rds On (Max)	Technology	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)
INFINEON IPB03N03LB G	N-Channel	7624 pF	Surface Mount	20 V	2 V	2.8 mOhm	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	4.5 V	PG-TO263-3	80 A	150 W	59 nC 59 nC	30 V	-55 °C	175 °C
INFINEON IPB03N03LA	N-Channel	7027 pF	Surface Mount	20 V	2 V	2.7 mOhm	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	4.5 V	PG-TO263-3-2	80 A	150 W	57 nC	25 V	-55 °C	175 °C
INFINEON IPB03N03LB	N-Channel	7624 pF	Surface Mount	20 V	2 V	2.8 mOhm	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	4.5 V	PG-TO263-3	80 A	150 W	59 nC 59 nC	30 V	-55 °C	175 °C

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