Specification	SI5406CDC-T1-GE3

Current - Continuous Drain (Id) (Tc)	6 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	32 nC, 32 nC
Input Capacitance (Ciss) (Max)	1100 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	Flat Leads, 8-SMD
Package Name	1206-8 ChipFET™
Power Dissipation (Max)	5.7 W, 2.3 W
Rds On (Max)	20 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

SI5406 Series

Part	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Rds On (Max)	Vgs(th) (Max)	Mounting Type	FET Type	Input Capacitance (Ciss) (Max)	Vgs (Max)	Gate Charge (Max)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Package Name	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI5406CDC-T1-GE3	6 A	2.3 W 5.7 W	20 mOhm	1 V	Surface Mount	N-Channel	1100 pF	8 V	32 nC 32 nC	8-SMD Flat Leads	4.5 V	1.8 V	MOSFET (Metal Oxide)	1206-8 ChipFET™	12 V	-55 °C	150 °C
Vishay Dale SI5406DC-T1-E3		1.3 W	20 mOhm	600 mV	Surface Mount	N-Channel		8 V	20 nC	8-SMD Flat Leads	4.5 V	2.5 V	MOSFET (Metal Oxide)	1206-8 ChipFET™	12 V	-55 °C	150 °C	6.9 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources