Specification	V10KL45DUHM3/I

Current - Average Rectified (Io) (per Diode)	5 A
Current - Reverse Leakage	650 µA
Diode Configuration	Independent
Diode Count	2
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	150 °C
Operating Temperature - Junction (Min)	-40 °C
Package / Case	8-PowerTDFN
Package Length	5 mm
Package Name	FlatPAK
Package Width	6 mm
Qualification	AEC-Q101
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	45 V
Voltage - Forward (Vf) (Max)	560 mV

V10KL45 Series

Part	Current - Average Rectified (Io) (per Diode)	Operating Temperature - Junction (Min)	Operating Temperature - Junction (Max)	Voltage - DC Reverse (Vr) (Max)	Qualification	Package Length	Package Name	Package Width	Technology	Diode Count	Diode Configuration	Voltage - Forward (Vf) (Max)	Mounting Type	Package / Case	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Grade	Current - Reverse Leakage
Vishay General Semiconductor - Diodes Division V10KL45DUHM3/I	5 A	-40 °C	150 °C	45 V	AEC-Q101	5 mm	FlatPAK	6 mm	Schottky	2	Independent	560 mV	Surface Mount	8-PowerTDFN	500 ns	200 mA	Automotive	650 µA
Vishay General Semiconductor - Diodes Division V10KL45DU-M3/H	5 A	-40 °C	150 °C	45 V	AEC-Q101	5 mm	FlatPAK	6 mm	Schottky	2	Independent	560 mV	Surface Mount	8-PowerTDFN	500 ns	200 mA	Automotive	650 µA
Vishay General Semiconductor - Diodes Division V10KL45DU-M3/I	5 A	-40 °C	150 °C	45 V	AEC-Q101	5 mm	FlatPAK	6 mm	Schottky	2	Independent	560 mV	Surface Mount	8-PowerTDFN	500 ns	200 mA	Automotive	650 µA

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