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PSMN1R1-80ASFJ

PSMN1R1-80ASFJ

Active
Nexperia USA Inc.

NEXTPOWER 80 V, 1.11 MOHM, N-CHANNEL MOSFET IN CCPAK1212 PACKAGE

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PSMN1R1-80ASFJ

PSMN1R1-80ASFJ

Active
Nexperia USA Inc.

NEXTPOWER 80 V, 1.11 MOHM, N-CHANNEL MOSFET IN CCPAK1212 PACKAGE

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Description

General part information

PSMN1R1-80ASF Series

NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN1R1-80ASFJ
Current - Continuous Drain (Id) (Tc)385 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On)7 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max)24627 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package FeaturesExposed Pad
Package Length0.37 in
Package NameCCPAK1212, 12-BESOP
Package Width9.4 mm
Power Dissipation (Max)935 W
Rds On (Max)1.11 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

3D models and CAD resources for this part