Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | D44H8 | D44H8 Series |
|---|---|---|
| - | - | |
| Current - Collector Cutoff (Max) [Max] | 10 µA | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 hFE | 40 hFE |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature | 150 °C | 150 °C |
| Package / Case | TO-220-3 | TO-220-3 |
| Power - Max [Max] | 50 W | 50 W |
| Supplier Device Package | TO-220 | TO-220 |
| Transistor Type | NPN | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1 V | 1 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
D44H8 Series
NPN SILICON POWER TRANSISTORS
| Part | Transistor Type | Current - Collector Cutoff (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce | Package / Case | Supplier Device Package | Vce Saturation (Max) @ Ib, Ic | Operating Temperature | Power - Max [Max] | Mounting Type | Voltage - Collector Emitter Breakdown (Max) |
|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics D44H8 | ||||||||||
STMicroelectronics D44H8 | NPN | 10 µA | 40 hFE | TO-220-3 | TO-220 | 1 V | 150 °C | 50 W | Through Hole | 60 V |
STMicroelectronics D44H8 | ||||||||||
STMicroelectronics D44H8 |
Description
General part information
D44H8 Series
The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications
Documents
Technical documentation and resources