
IPB054N08N3GATMA1
ActiveInfineon Technologies
MOSFET TRANSISTOR, N CHANNEL, 80 A, 80 V, 0.0046 OHM, 10 V, 2.8 V ROHS COMPLIANT: YES
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IPB054N08N3GATMA1
ActiveInfineon Technologies
MOSFET TRANSISTOR, N CHANNEL, 80 A, 80 V, 0.0046 OHM, 10 V, 2.8 V ROHS COMPLIANT: YES
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB054N08N3GATMA1 |
|---|---|
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 69 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) @ Id, Vgs | 5.4 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB054 Series
OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).
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Technical documentation and resources