PSMN1R8-30MLHX
ActiveN-CHANNEL 30 V, 2.1 MΩ, 150 A LOGIC LEVEL MOSFET IN LFPAK33 USING NEXTPOWERS3 TECHNOLOGY
PSMN1R8-30MLHX
ActiveN-CHANNEL 30 V, 2.1 MΩ, 150 A LOGIC LEVEL MOSFET IN LFPAK33 USING NEXTPOWERS3 TECHNOLOGY
Description
General part information
PSMN1R8-30MLH Series
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSSleakage and high efficiency. Rated to 150 A and optimizedwith low gate resistance (RG) for fast-switching applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN1R8-30MLHX |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 150 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 58 nC, 58 nC |
| Input Capacitance (Ciss) (Max) | 3125 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-LFPAK33 (5-Lead), SOT-1210 |
| Package Name | LFPAK33 |
| Power Dissipation (Max) | 106 W |
| Rds On (Max) | 2.1 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.2 V |
Pricing
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