1SS272TE85LF

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Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SC61B

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Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SC61B

Technical Specifications

Parameters and characteristics for this part

Specification	1SS272TE85LF

Current - Average Rectified (Io) (per Diode)	100 mA
Current - Reverse Leakage @ Vr	500 nA
Diode Configuration	2 Independent
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	SC-61AA
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SC-61B
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V

DIODE ARRAY GP 80V 100MA SC61B

Part	Package / Case	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Diode Configuration	Supplier Device Package	Current - Reverse Leakage @ Vr	Speed	Speed	Reverse Recovery Time (trr)	Operating Temperature - Junction	Current - Average Rectified (Io) (per Diode)
Toshiba Semiconductor and Storage 1SS272TE85LF	SC-61AA	Surface Mount	80 V	Standard	2 Independent	SC-61B	500 nA	Any Speed	200 mA	4 ns	125 °C	100 mA

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General part information

Diode Array 2 Independent 80 V 100mA Surface Mount SC-61AA

Technical documentation and resources

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