Specification	SI2327DS-T1-E3

Current - Continuous Drain (Id) (Ta)	380 mA
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	12 nC
Input Capacitance (Ciss) (Max)	510 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	750 mW
Rds On (Max)	2.35 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

SI2327 Series

Part	FET Type	Vgs(th) (Max)	Mounting Type	Current - Continuous Drain (Id) (Ta)	Power Dissipation (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Technology	Package / Case	Input Capacitance (Ciss) (Max)	Rds On (Max)	Vgs (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SI2327DS-T1-E3	P-Channel	4.5 V	Surface Mount	380 mA	750 mW	12 nC	200 V	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	510 pF	2.35 Ohm	20 V	6 V	10 V	SOT-23-3 (TO-236)	-55 °C	150 °C
Vishay Dale SI2327DS-T1-GE3	P-Channel	4.5 V	Surface Mount	380 mA	750 mW	12 nC	200 V	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	510 pF	2.35 Ohm	20 V	6 V	10 V	SOT-23-3 (TO-236)	-55 °C	150 °C

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