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JANKCA2N2369A

JANKCA2N2369A

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Microchip Technology

SMALL-SIGNAL BJT DIE ROHS COMPLIANT: YES

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Description

General part information

JANKCA2N2369A-Transistor-Die Series

This specification covers the performance requirements for NPN, silicon, high speed switching 2N2369A, 2N3227 and 2N4449 transistors (including dual devices). Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/317 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC. RHA level designators "M", "D", "P", "L", "R", "F’, "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Technical Specifications

Parameters and characteristics for this part

SpecificationJANKCA2N2369A
Current - Collector Cutoff (Max)400 nA
DC Current Gain (hFE) (Min)20
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-18-3 Metal Can, TO-206AA
Package NameTO-18
Power - Max360 mW
QualificationMIL-PRF-19500, 317
Transistor TypeNPN
Vce Saturation (Max)450 mV
Voltage - Collector Emitter Breakdown (Max)15 V

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