Specification	IRF7831TRPBF

Current - Continuous Drain (Id) (Ta)	21 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	60 nC
Input Capacitance (Ciss) (Max)	6240 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SO, 8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max)	3.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	2.35 V

IRF7831 Series

Part	Power Dissipation (Max)	Rds On (Max)	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Package Name	Package Length	Package Width	Mounting Type	Current - Continuous Drain (Id) (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	FET Type
INFINEON IRF7831TRPBF	2.5 W	3.6 mOhm	MOSFET (Metal Oxide)	10 V	4.5 V	60 nC	12 V	30 V	2.35 V	8-SO 8-SOIC	0.154 in	3.9 mm	Surface Mount	21 A	-55 °C	150 °C	6240 pF	N-Channel

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