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IGP50N60TXKSA1

IGP50N60TXKSA1

Obsolete
INFINEON

THE IGP50N60T IS A 600 V, 50 A IGBT DISCRETE IN TO-220 PACKAGE

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IGP50N60TXKSA1

IGP50N60TXKSA1

Obsolete
INFINEON

THE IGP50N60T IS A 600 V, 50 A IGBT DISCRETE IN TO-220 PACKAGE

Find alt

Description

General part information

IGP50N60 Series

Hard-switching 600 V, 50 A singleTRENCHSTOP™IGBT3 in TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Technical Specifications

Parameters and characteristics for this part

SpecificationIGP50N60TXKSA1
Current - Collector (Ic) (Max)100 A
Current - Collector Pulsed (Icm)150 A
Gate Charge310 nC
IGBT TypeTrench Field Stop
Input TypeStandard
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-40 °C
Package / CaseTO-220-3
Package NamePG-TO220-3-1
Power - Max333 W
Switching Energy2.6 mJ
Td (off) @ 25°C299 ns
Td (on) @ 25°C26 ns
Test Condition Current50 A
Test Condition Resistance7 Ohm
Test Condition Voltage400 V
Test Condition Voltage (Secondary)15 V
Vce(on) (Max)2 V
Voltage - Collector Emitter Breakdown (Max)600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

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Documents

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