PBSS8510PA,115
ActiveNexperia USA Inc.
TRANS GP BJT NPN 100V 5.2A 2100MW 3-PIN HUSON T/R
PBSS8510PA,115
ActiveNexperia USA Inc.
TRANS GP BJT NPN 100V 5.2A 2100MW 3-PIN HUSON T/R
Description
General part information
PBSS8510PA Series
NPN low VCEsatBreakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS8510PA,115 |
|---|---|
| Current - Collector (Ic) (Max) | 5.2 A |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 95 |
| Frequency - Transition | 150 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 3-PowerUDFN |
| Package Length | 2 mm |
| Package Name | 3-HUSON |
| Package Width | 2 mm |
| Power - Max | 2.1 W |
| Transistor Type | NPN |
| Vce Saturation (Max) | 340 mV |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
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