Specification	CNY117F-2X016

Current - DC Forward (If) (Max)	60 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max)	125 %
Current Transfer Ratio (Min)	63 %
Fall Time (Typ)	2 µs
Input Type	DC
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature (Max)	110 °C
Operating Temperature (Min)	-55 °C
Output Type	Transistor
Package Length	10.16 mm
Package Name	6-DIP
Package Width	10.16 mm
Rise Time (Typ)	2 µs
Turn Off Time (Typ)	2.3 µs
Turn On Time (Typ)	3 µs
Vce Saturation (Max)	400 mV
Voltage - Forward (Vf) (Typ)	1.39 V
Voltage - Isolation	5000 Vrms
Voltage - Output (Max)	70 V

CNY117 Series

Part	Package Name	Rise Time (Typ)	Fall Time (Typ)	Current - DC Forward (If) (Max)	Voltage - Forward (Vf) (Typ)	Current - Output / Channel	Current Transfer Ratio (Max)	Voltage - Output (Max)	Turn On Time (Typ)	Turn Off Time (Typ)	Vce Saturation (Max)	Output Type	Voltage - Isolation	Operating Temperature (Max)	Operating Temperature (Min)	Number of Channels	Input Type	Mounting Type	Package Length	Package Width	Current Transfer Ratio (Min)	Package / Case
Vishay Semiconductor Opto Division CNY117F-4X006	6-DIP	2 µs	2 µs	60 mA	1.39 V	50 mA	320 %	70 V	3 µs	2.3 µs	400 mV	Transistor	5000 Vrms	110 °C	-55 °C	1	DC	Through Hole	10.16 mm	10.16 mm	160 %
Vishay Semiconductor Opto Division CNY117F-2X016	6-DIP	2 µs	2 µs	60 mA	1.39 V	50 mA	125 %	70 V	3 µs	2.3 µs	400 mV	Transistor	5000 Vrms	110 °C	-55 °C	1	DC	Through Hole	10.16 mm	10.16 mm	63 %
Vishay Semiconductor Opto Division CNY117-2X006	6-DIP	2 µs	2 µs	60 mA	1.39 V	50 mA	125 %	70 V	3 µs	2.3 µs	400 mV	Transistor with Base	5000 Vrms	110 °C	-55 °C	1	DC	Through Hole	10.16 mm	10.16 mm	63 %
Vishay Semiconductor Opto Division CNY117F-2X006	6-DIP	2 µs	2 µs	60 mA	1.39 V	50 mA	125 %	70 V	3 µs	2.3 µs	400 mV	Transistor	5000 Vrms	110 °C	-55 °C	1	DC	Through Hole	10.16 mm	10.16 mm	63 %
Vishay Semiconductor Opto Division CNY117F-4X001	6-DIP	2 µs	2 µs	60 mA	1.39 V	50 mA	320 %	70 V	3 µs	2.3 µs	400 mV	Transistor	5000 Vrms	110 °C	-55 °C	1	DC	Through Hole	0.3 in	7.62 mm	160 %
Vishay Semiconductor Opto Division CNY117F-4X016	6-DIP	2 µs	2 µs	60 mA	1.39 V	50 mA	320 %	70 V	3 µs	2.3 µs	400 mV	Transistor	5000 Vrms	110 °C	-55 °C	1	DC	Through Hole	10.16 mm	10.16 mm	160 %
Vishay Semiconductor Opto Division CNY117F-4X017T	6-SMD	2 µs	2 µs	60 mA	1.39 V	50 mA	320 %	70 V	3 µs	2.3 µs	400 mV	Transistor	5000 Vrms	110 °C	-55 °C	1	DC	Surface Mount			160 %	6-SMD Gull Wing
Vishay Semiconductor Opto Division CNY117-2X016	6-DIP	2 µs	2 µs	60 mA	1.39 V	50 mA	125 %	70 V	3 µs	2.3 µs	400 mV	Transistor with Base	5000 Vrms	110 °C	-55 °C	1	DC	Through Hole	10.16 mm	10.16 mm	63 %
Vishay Semiconductor Opto Division CNY117F-1	6-DIP	2 µs	2 µs	60 mA	1.39 V	50 mA	80 %	70 V	3 µs	2.3 µs	400 mV	Transistor	5000 Vrms	110 °C	-55 °C	1	DC	Through Hole	0.3 in	7.62 mm	40 %
Vishay Semiconductor Opto Division CNY117F-3X001	6-DIP	2 µs	2 µs	60 mA	1.39 V	50 mA	200 %	70 V	3 µs	2.3 µs	400 mV	Transistor	5000 Vrms	110 °C	-55 °C	1	DC	Through Hole	0.3 in	7.62 mm	100 %

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CNY117F-2X016 | Datasheet