Description
General part information
AUIRF540 Series
The AUIRF540Z is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | AUIRF540Z |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 36 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 63 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 1770 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220AB |
| Power Dissipation (Max) | 92 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 26.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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