2N3637UB/TR
Active175V 1A 1.5W3 PIN CER SMALL-SIGNAL BJT TR UB ROHS COMPLIANT: YES
2N3637UB/TR
Active175V 1A 1.5W3 PIN CER SMALL-SIGNAL BJT TR UB ROHS COMPLIANT: YES
Description
General part information
2N3637UB-Transistor Series
This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC).
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N3637UB/TR |
|---|---|
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 10 µA |
| DC Current Gain (hFE) (Min) | 100 |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | No Lead, 3-SMD |
| Package Name | UB |
| Power - Max | 1.5 W |
| Transistor Type | PNP |
| Vce Saturation (Max) | 600 mV |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
Pricing
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