IR2010STRPBF

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INFINEON

THE IR2010S IS A 200 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN ( 16 LEAD SOICWB PACKAGE)

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IR2010STRPBF

Active

INFINEON

THE IR2010S IS A 200 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN ( 16 LEAD SOICWB PACKAGE)

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Description Specifications Series Pricing CAD Documents

Description

General part information

IR2010 Series

EiceDRIVER™ 200 V high and low sideGate Driver ICwith typical 3 A source and 3 A sink currents in 16 Lead SOICWB package forIGBTsandMOSFETs. Also available in 14 Lead PDIP.

Technical Specifications

Parameters and characteristics for this part

Specification	IR2010STRPBF

Channel Type	Independent
Current - Peak Output (Sink)	3 A
Current - Peak Output (Source)	3 A
Driven Configuration	Half-Bridge
Fall Time (Typ)	15 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	200 V
Input Type	Non-Inverting
Logic Voltage - VIH	9.5 V
Logic Voltage - VIL	6 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.295 in
Package Name	16-SOIC
Package Width	7.5 mm
Rise Time (Typ)	10 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2010 Series

Part	High Side Voltage - Max (Bootstrap)	Gate Channel	Gate Type	Channel Type	Current - Peak Output (Sink)	Current - Peak Output (Source)	Logic Voltage - VIH	Logic Voltage - VIL	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Package Name	Input Type	Rise Time (Typ)	Fall Time (Typ)	Mounting Type	Package Length	Package Width	Driven Configuration	Number of Drivers	Operating Temperature (Min)	Operating Temperature (Max)
INFINEON IR2010PBF	200 V	N-Channel	IGBT MOSFET N-Channel MOSFET	Independent	3 A	3 A	9.5 V	6 V	10 VDC	20 V	14-DIP	Non-Inverting	10 ns	15 ns	Through Hole	0.3 in	7.62 mm	Half-Bridge	2	-40 °C	150 °C
INFINEON IR2010STRPBF	200 V	N-Channel	IGBT MOSFET N-Channel MOSFET	Independent	3 A	3 A	9.5 V	6 V	10 VDC	20 V	16-SOIC	Non-Inverting	10 ns	15 ns	Surface Mount	0.295 in	7.5 mm	Half-Bridge	2	-40 °C	150 °C
INFINEON IR2010SPBF	200 V	N-Channel	IGBT MOSFET N-Channel MOSFET	Independent	3 A	3 A	9.5 V	6 V	10 VDC	20 V	16-SOIC	Non-Inverting	10 ns	15 ns	Surface Mount	0.295 in	7.5 mm	Half-Bridge	2	-40 °C	150 °C

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

IR2010STRPBF | Datasheet