Zenode.ai Logo
TK20N60W - High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.155 Ω@10V, TO-247, DTMOSⅣ

TK28N65W5,S1F

Active
Toshiba Semiconductor and Storage

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 650 V, 0.13 Ω@10V, TO-247, DTMOSⅣ

Find alt
TK20N60W - High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.155 Ω@10V, TO-247, DTMOSⅣ

TK28N65W5,S1F

Active
Toshiba Semiconductor and Storage

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 650 V, 0.13 Ω@10V, TO-247, DTMOSⅣ

Find alt

Description

General part information

TK28N65W5 Series

High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.13 Ω@10V, TO-247, DTMOSⅣ

Technical Specifications

Parameters and characteristics for this part

SpecificationTK28N65W5,S1F
Current - Continuous Drain (Id) (Ta)27.6 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)90 nC
Input Capacitance (Ciss) (Max)3000 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-247-3
Package NameTO-247
Power Dissipation (Max)230 W
Rds On (Max)130 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Maximum Ratings: Power MOSFET Application Notes
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Simplified CFD Model Application Note
Resonant Circuits and Soft Switching
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Structures and Characteristics: Power MOSFET Application Notes
Electrical Characteristics: Power MOSFET Application Notes
Avalanche energy calculation
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
TK28N65W5 Data sheet/Japanese
Motor Control (Vacuum Cleaners)
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Selection Guide MOSFETs 2025 Rev1.0
Derating of the MOSFET Safe Operating Area
Hints and Tips for Thermal Design part3
MOSFET Self-Turn-On Phenomenon
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
RC Snubbers for Step-Down Converters
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
MOSFET Secondary Breakdown
Calculating the Temperature of Discrete Semiconductor Devices
MOSFET SPICE model grade
TK28N65W5 Data sheet/English
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2