PSMN0R9-30YLDX
ActiveN-CHANNEL 30 V, 0.87 MΩ, 300 A LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWERS3 TECHNOLOGY
PSMN0R9-30YLDX
ActiveN-CHANNEL 30 V, 0.87 MΩ, 300 A LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWERS3 TECHNOLOGY
Description
General part information
PSMN0R9-30YLD Series
300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN0R9-30YLDX |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 300 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 109 nC |
| Input Capacitance (Ciss) (Max) | 7668 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 4-LFPAK, SOT-1023 |
| Package Name | Power-SO8, LFPAK56 |
| Power Dissipation (Max) | 291 W |
| Rds On (Max) | 0.87 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources