Description
General part information
Linear FET 2 Series
IPT017N10NM5LF2 is Infineon’s best-in-class OptiMOS™ 5 Linear FET 2 100 V in TO-Leadless (TOLL), offering the industry’s lowest RDS(on)and wide SOA at 25˚C. The combination of the OptiMOS™ 5 Linear FET 2 technology and the TOLL package, the IPT017N10NM5 is designed to provide highest power density, for inrush current protection applications such as hot-swap, e-fuse, and within battery protection in Battery management systems (BMS).
Technical Specifications
Parameters and characteristics for this part
| Specification | IPT017N10NM5LF2ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 32 A |
| Current - Continuous Drain (Id) (Tc) | 321 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 10 V |
| Drive Voltage (Min Rds On) | 15 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 206 nC |
| Input Capacitance (Ciss) (Max) | 17000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerSFN |
| Package Name | PG-HSOF-8-1 |
| Power Dissipation (Max) | 3.8 W, 375 W |
| Rds On (Max) | 1.6 mOhm, 1.6 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.9 V |
Pricing
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