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SOT8002-1

PXN018-30QLJ

Active
Nexperia USA Inc.

MOSFETS N-CHANNEL 100 V, 20 MOHM, STANDARD LEVEL TRENCH MOSFET IN MLPAK33

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SOT8002-1

PXN018-30QLJ

Active
Nexperia USA Inc.

MOSFETS N-CHANNEL 100 V, 20 MOHM, STANDARD LEVEL TRENCH MOSFET IN MLPAK33

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Description

General part information

PXN018-30QL Series

N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

SpecificationPXN018-30QLJ
Current - Continuous Drain (Id) (Ta)7.5 A
Current - Continuous Drain (Id) (Tc)19.2 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)10.8 nC
Input Capacitance (Ciss) (Max)447 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerVDFN
Package NameMLPAK33
Power Dissipation (Max)1.7 W, 10.9 W
Rds On (Max)18 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

3D models and CAD resources for this part