TDTC114Y,LM

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SOT23-3

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	TDTC114Y,LM

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	79
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	320 mW
Resistor - Base (R1)	10 kOhms
Supplier Device Package	SOT-23-3
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Frequency - Transition	Mounting Type	Package / Case	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Supplier Device Package	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Resistor - Base (R1)	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]
Toshiba Semiconductor and Storage TDTC114Y,LM	250 MHz	Surface Mount	SC-59 SOT-23-3 TO-236-3	300 mV	500 nA	320 mW	SOT-23-3	NPN - Pre-Biased	79	10 kOhms	50 V	100 mA

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General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 320 mW Surface Mount SOT-23-3

Technical documentation and resources