Specification	SPB07N60C3ATMA1

Current - Continuous Drain (Id) (Tc)	7.3 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	27 nC
Input Capacitance (Ciss) (Max)	790 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3-2
Power Dissipation (Max)	83 W
Rds On (Max)	600 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.9 V

SPB07N Series

Part	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package Name	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max)	Power Dissipation (Max)	Vgs (Max)	Technology
INFINEON SPB07N60C3ATMA1	790 pF	3.9 V	27 nC	10 V	Surface Mount	PG-TO263-3-2	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	150 °C	7.3 A	N-Channel	650 V	600 mOhm	83 W	20 V	MOSFET (Metal Oxide)

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