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PBHV8140Z,115

PBHV8140Z,115

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Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 500 V, 1 A NPN HIGH-VOLTAGE LOW VCESAT TRANSISTOR

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PBHV8140Z,115

PBHV8140Z,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 500 V, 1 A NPN HIGH-VOLTAGE LOW VCESAT TRANSISTOR

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Description

General part information

PBHV8140Z Series

NPN high-voltage low VCEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

Technical Specifications

Parameters and characteristics for this part

SpecificationPBHV8140Z,115
Current - Collector (Ic) (Max)1 A
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)35
Frequency - Transition25 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-261AA, TO-261-4
Package NameSOT-223
Power - Max1.45 W
QualificationAEC-Q100
Transistor TypeNPN
Vce Saturation (Max)250 mV
Voltage - Collector Emitter Breakdown (Max)400 V

Pricing

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CAD

3D models and CAD resources for this part