Description
General part information
2ED2104 Series
650 V high speedhalf-bridgegate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving powerMOSFETs andIGBTs. Based on ourSOI-technology, the 2ED2104S06F has excellent ruggedness and noise immunity against negative transient voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2ED2104S06FXUMA1 |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Sink) | 700 mA |
| Current - Peak Output (Source) | 290 mA |
| Driven Configuration | Half-Bridge |
| Fall Time (Typ) | 35 ns |
| Gate Channel | N-Channel |
| Gate Type | IGBT, MOSFET |
| High Side Voltage - Max (Bootstrap) | 650 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIH | 1.7 V |
| Logic Voltage - VIL | 1.1 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC, PG-DSO-8-69 |
| Package Width | 3.9 mm |
| Rise Time (Typ) | 70 ns |
| Voltage - Supply (Maximum) | 20 V |
| Voltage - Supply (Minimum) | 10 VDC |
Pricing
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