Specification	IXFP8N50PM

Current - Continuous Drain (Id) (Tc)	4.4 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	20 nC
Input Capacitance (Ciss) (Max)	1050 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220-3
Power Dissipation (Max)	42 W
Rds On (Max)	800 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5.5 V

IXFP8N50 Series

Part	Rds On (Max)	Power Dissipation (Max)	FET Type	Vgs(th) (Max)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Input Capacitance (Ciss) (Max)	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Package Name	Gate Charge (Max)
LITTELFUSE IXFP8N50PM	800 mOhm	42 W	N-Channel	5.5 V	30 V	-55 °C	150 °C	4.4 A	10 V	MOSFET (Metal Oxide)	1050 pF	TO-220-3	Through Hole	500 V	TO-220-3	20 nC
LITTELFUSE IXFP8N50P3	800 mOhm	180 W	N-Channel	5 V	30 V	-55 °C	150 °C	8 A	10 V	MOSFET (Metal Oxide)		TO-220-3	Through Hole	500 V	TO-220-3	13 nC

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