IPP034N03LGHKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 30V 80A TO220-3

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Obsolete

Infineon Technologies

MOSFET N-CH 30V 80A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP034N03LGHKSA1

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds	5300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	94 W
Rds On (Max) @ Id, Vgs	3.4 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max)	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology
Infineon Technologies IPP034N03LGHKSA1	3.4 mOhm	20 V	25 nC	4.5 V 10 V	-55 °C	175 ░C	TO-220-3	94 W	PG-TO220-3-1	N-Channel	2.2 V	30 V	5300 pF	Through Hole	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 80A (Tc) 94W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources