IDB45E60ATMA1

Obsolete

Infineon Technologies

DIODE GEN PURP 600V 71A TO263-3

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Obsolete

Infineon Technologies

DIODE GEN PURP 600V 71A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	IDB45E60ATMA1

Current - Average Rectified (Io)	71 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	140 ns
Speed	200 mA, 500 ns
Supplier Device Package	PG-TO263-3-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2 V

Part	Speed	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Package / Case	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Mounting Type
Infineon Technologies IDB45E60ATMA1	200 mA 500 ns	140 ns	175 ░C	-55 C	600 V	Standard	71 A	50 µA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2 V	PG-TO263-3-2	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 71A Surface Mount PG-TO263-3-2

Technical documentation and resources