MPSA63 PBFREE

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Central Semiconductor Corp

TRANS PNP DARL 20V 0.5A TO92-3

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Central Semiconductor Corp

TRANS PNP DARL 20V 0.5A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	MPSA63 PBFREE

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10000
Frequency - Transition	125 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP - Darlington
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max)	20 V

Part	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Power - Max [Max]
Central Semiconductor Corp MPSA63 PBFREE	1.5 V	TO-92-3	150 °C	-65 °C	TO-226-3 TO-92-3	10000	PNP - Darlington	500 mA	125 MHz	100 nA	20 V	Through Hole	625 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP - Darlington 20 V 500 mA 125MHz 625 mW Through Hole TO-92-3

Technical documentation and resources