TN2640LG-G
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 400V, 5.0 OHM
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TN2640LG-G
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 400V, 5.0 OHM
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TN2640LG-G | TN2640 Series |
|---|---|---|
| - | - | |
| Current - Continuous Drain (Id) @ 25°C | 260 mA | 260 - 500 mA |
| Drain to Source Voltage (Vdss) | 400 V | 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V | 4.5 - 10 V |
| FET Type | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF | 225 pF |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | 8-SOIC | 8-SOIC, SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package / Case [x] | 0.154 in | 0.154 in |
| Package / Case [y] | 3.9 mm | 3.9 mm |
| Power Dissipation (Max) | 1.3 W | 1.3 - 2.5 W |
| Rds On (Max) @ Id, Vgs | 5 Ohm | 5 Ohm |
| Supplier Device Package | 8-SOIC | 8-SOIC, TO-252 (DPAK) |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
| Vgs(th) (Max) @ Id | 2 V | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.42 | |
| 25 | $ 2.03 | |||
| 100 | $ 1.84 | |||
| Digi-Reel® | 1 | $ 2.42 | ||
| 25 | $ 2.03 | |||
| 100 | $ 1.84 | |||
| Tape & Reel (TR) | 3300 | $ 1.84 | ||
| Microchip Direct | T/R | 1 | $ 2.42 | |
| 25 | $ 2.03 | |||
| 100 | $ 1.84 | |||
| 1000 | $ 1.52 | |||
| 5000 | $ 1.40 | |||
| 10000 | $ 1.31 | |||
TN2640 Series
MOSFET, N-Channel Enhancement-Mode, 400V, 5.0 Ohm
| Part | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Technology | Mounting Type | FET Type | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TN2640LG-G | |||||||||||||||||
Microchip Technology TN2640LG-G | 4.5 V, 10 V | 2 V | 8-SOIC | 3.9 mm | 0.154 in | 225 pF | 8-SOIC | MOSFET (Metal Oxide) | Surface Mount | N-Channel | 1.3 W | 400 V | 20 V | -55 °C | 150 °C | 260 mA | 5 Ohm |
Microchip Technology TN2640K4-G | 4.5 V, 10 V | 2 V | DPAK (2 Leads + Tab), SC-63, TO-252-3 | 225 pF | TO-252 (DPAK) | MOSFET (Metal Oxide) | Surface Mount | N-Channel | 2.5 W | 400 V | 20 V | -55 °C | 150 °C | 500 mA | 5 Ohm | ||
Microchip Technology TN2640N3-G |
Description
General part information
TN2640 Series
This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.