STFU16N65M2

Obsolete

STMicroelectronics

MOSFET, N-CH, 650V, 11A, TO-220FP

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Obsolete

STMicroelectronics

MOSFET, N-CH, 650V, 11A, TO-220FP

Technical Specifications

Parameters and characteristics for this part

Specification	STFU16N65M2

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19.5 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Technology	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]
STMicroelectronics STFU16N65M2	360 mOhm	TO-220FP	25 W	MOSFET (Metal Oxide)	TO-220-3 Full Pack	650 V	Through Hole	11 A	10 V	25 V	4 V	N-Channel	19.5 nC	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Newark	Each	1	$ 2.59

General part information

N-Channel 650 V 11A (Tc) 25W (Tc) Through Hole TO-220FP

Technical documentation and resources