Specification	SIRA02DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	117 nC
Input Capacitance (Ciss) (Max)	6150 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	5 W, 71.4 W
Rds On (Max)	2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-16 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.2 V

SIRA02 Series

Part	Package / Case	Vgs (Max) Negative	Vgs (Max) Positive	Vgs(th) (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Technology	FET Type	Input Capacitance (Ciss) (Max)
Vishay Dale SIRA02DP-T1-GE3	PowerPAK® SO-8	-16 V	20 V	2.2 V	117 nC	-55 °C	150 °C	PowerPAK® SO-8	5 W 71.4 W	50 A	2 mOhm	10 V	4.5 V	Surface Mount	30 V	MOSFET (Metal Oxide)	N-Channel	6150 pF

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