Specification	IPD053N06N3GBTMA1

Current - Continuous Drain (Id) (Tc)	90 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	82 nC
Input Capacitance (Ciss) (Max)	6600 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	PG-TO252-3
Power Dissipation (Max)	115 W
Rds On (Max)	5.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IPD053N Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Power Dissipation (Max)	Technology	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Input Capacitance (Ciss) (Max)	FET Type	Gate Charge (Max)
INFINEON IPD053N06N3GBTMA1	10 V	Surface Mount	4 V	5.3 mOhm	60 V	90 A	20 V	115 W	MOSFET (Metal Oxide)	PG-TO252-3	-55 °C	175 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	6600 pF	N-Channel	82 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources