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BUJ105A,127

BUJ105A,127

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WeEn Semiconductors

SOT78/SILICON DIFFUSED POWER TRANSISTOR

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BUJ105A,127

BUJ105A,127

Active
WeEn Semiconductors

SOT78/SILICON DIFFUSED POWER TRANSISTOR

Find alt

Description

General part information

BUJ105 Series

Bipolar (BJT) Transistor NPN 400 V 8 A 80 W Through Hole TO-220AB

Technical Specifications

Parameters and characteristics for this part

SpecificationBUJ105A,127
Current - Collector (Ic) (Max)8 A
Current - Collector Cutoff (Max)100 µA
DC Current Gain (hFE) (Min)13
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3
Package NameTO-220AB
Power - Max80 W
Transistor TypeNPN
Vce Saturation (Max)1 V
Voltage - Collector Emitter Breakdown (Max)400 V

Pricing

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