Specification	SI4862DY-T1-E3

Current - Continuous Drain (Id) (Ta)	17 A
Drain to Source Voltage (Vdss)	16 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	70 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	1.6 W
Rds On (Max)	3.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	600 mV

SI4862 Series

Part	Vgs(th) (Max)	Rds On (Max)	Package Name	Technology	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Gate Charge (Max)	Current - Continuous Drain (Id) (Ta)	FET Type	Vgs (Max)	Package Length	Package Width	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)
Vishay Dale SI4862DY-T1-GE3	600 mV	3.3 mOhm	8-SOIC	MOSFET (Metal Oxide)	Surface Mount	1.6 W	2.5 V	4.5 V	70 nC	17 A	N-Channel	8 V	0.154 in	3.9 mm	-55 °C	150 °C	16 V
Vishay Dale SI4862DY-T1-E3	600 mV	3.3 mOhm	8-SOIC	MOSFET (Metal Oxide)	Surface Mount	1.6 W	2.5 V	4.5 V	70 nC	17 A	N-Channel	8 V	0.154 in	3.9 mm	-55 °C	150 °C	16 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources