GANB012-040CBAZ
Active40 V, 12 MOHM BI-DIRECTIONAL GALLIUM NITRIDE (GAN) FET IN A 1.2 MM X 1.7 MM WAFER LEVEL CHIP-SCALE PACKAGE (WLCSP)
GANB012-040CBAZ
Active40 V, 12 MOHM BI-DIRECTIONAL GALLIUM NITRIDE (GAN) FET IN A 1.2 MM X 1.7 MM WAFER LEVEL CHIP-SCALE PACKAGE (WLCSP)
Description
General part information
GANB012-040CBA Series
The GANB012-040CBA is a 40 V, 12 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off e-mode device offering superior performance.
Technical Specifications
Parameters and characteristics for this part
| Specification | GANB012-040CBAZ |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 10 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 7.2 nC |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | WLCSP, 12-UFBGA |
| Power Dissipation (Max) | 11 W |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | 6 V |
| Vgs(th) (Max) | 2.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources