Specification	SI4114DY-T1-GE3

Current - Continuous Drain (Id) (Tc)	20 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	95 nC
Input Capacitance (Ciss) (Max)	3700 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	2.5 W, 5.7 W
Rds On (Max)	6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max)	2.1 V

SI4114 Series

Part	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package Length	Package Name	Package Width	Technology	Vgs (Max)	Rds On (Max)	Mounting Type	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)
Vishay Dale SI4114DY-T1-GE3	2.5 W 5.7 W	-55 °C	150 °C	0.154 in	8-SOIC	3.9 mm	MOSFET (Metal Oxide)	16 V	6 mOhm	Surface Mount	95 nC	20 A	3700 pF	N-Channel	20 V	10 V	4.5 V	2.1 V
Vishay Dale SI4114DY-T1-E3	2.5 W 5.7 W	-55 °C	150 °C	0.154 in	8-SOIC	3.9 mm	MOSFET (Metal Oxide)	16 V	6 mOhm	Surface Mount	95 nC	20 A	3700 pF	N-Channel	20 V	10 V	4.5 V	2.1 V

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