IXTQ470P2

Obsolete

IXYS

MOSFET N-CH 500V 42A TO3P

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 500V 42A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	IXTQ470P2

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	88 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	830 W
Rds On (Max) @ Id, Vgs	145 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)
IXYS IXTQ470P2	MOSFET (Metal Oxide)	30 V	88 nC	Through Hole	42 A	5400 pF	N-Channel	4.5 V	-55 °C	150 °C	TO-3P	500 V	SC-65-3 TO-3P-3	830 W	145 mOhm	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 42A (Tc) 830W (Tc) Through Hole TO-3P

Technical documentation and resources

No documents available