ZXMN2F34MATA

Obsolete

Diodes Inc

MOSFET N-CH 20V 4A DFN322

Search across all available documentation for this part.

Obsolete

Diodes Inc

MOSFET N-CH 20V 4A DFN322

Technical Specifications

Parameters and characteristics for this part

Specification	ZXMN2F34MATA

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.8 nC
Input Capacitance (Ciss) (Max) @ Vds	277 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-PowerVDFN
Power Dissipation (Max)	1.35 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	DFN322
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id
Diodes Inc ZXMN2F34MATA	2.5 V 4.5 V	20 V	Surface Mount	4 A	MOSFET (Metal Oxide)	3-PowerVDFN	DFN322	60 mOhm	N-Channel	1.35 W	-55 °C	150 °C	12 V	277 pF	2.8 nC	1.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$