TPD2EUSB30ADRTR
ActiveDUAL 0.7-PF, 3.6-V, ±8-KV ESD PROTECTION DIODE WITH 5-A SURGE RATING FOR USB 3.0
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TPD2EUSB30ADRTR
ActiveDUAL 0.7-PF, 3.6-V, ±8-KV ESD PROTECTION DIODE WITH 5-A SURGE RATING FOR USB 3.0
Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TPD2EUSB30ADRTR | TPD2EUSB30 Series |
|---|---|---|
| Applications | General Purpose | General Purpose |
| Current - Peak Pulse (10/1000µs) | 1 A | 1 - 5 A |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 85 °C | 85 °C |
| Operating Temperature [Min] | -40 °C | -40 °C |
| Package / Case | 3-SMD, SOT-23-3 Variant | 3-SMD, SOT-23-3 Variant |
| Power - Peak Pulse | 45 W | 45 W |
| Power Line Protection | True | True |
| Supplier Device Package | SOT-3 | SOT-3 |
| Type | Zener | Zener |
| Unidirectional Channels [custom] | 2 | 2 |
| Voltage - Breakdown (Min) [Min] | 4.5 V | 4.5 - 7 V |
| Voltage - Clamping (Max) @ Ipp [Max] | 8 V | 8 V |
| Voltage - Reverse Standoff (Typ) | 3.6 V | 3.6 - 5.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
TPD2EUSB30 Series
Dual 0.7-pF, 3.6-V, ±8-kV ESD protection diode with 5-A surge rating for USB 3.0
| Part | Applications | Power Line Protection | Voltage - Clamping (Max) @ Ipp [Max] | Power - Peak Pulse | Type | Mounting Type | Package / Case | Supplier Device Package | Current - Peak Pulse (10/1000µs) | Voltage - Breakdown (Min) [Min] | Unidirectional Channels [custom] | Voltage - Reverse Standoff (Typ) | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments TPD2EUSB30ADRTRThe TPD2EUSB30, TPD2EUSB30A, and TPD4EUSB30 are 2 and 4 channel Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode arrays. The TPDxEUSB30/A devices are rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Contact). These devices also offer 5 A (8/20 µs) peak pulse current ratings per IEC 61000-4-5 (Surge) specification.
The TPD2EUSB30A offers low 4.5-V DC break-down voltage. The low capacitance, low break-down voltage, and low dynamic resistance make the TPD2EUSB30A a superior protection device for high-speed differential IOs.
The TPD2EUSB30 and TPD2EUSB30A are offered in space saving DRT (1 mm × 1 mm) package. The TPD4EUSB30 is offered in space saving DQA (2.5 mm × 1.0 mm) package.
The TPD2EUSB30, TPD2EUSB30A, and TPD4EUSB30 are 2 and 4 channel Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode arrays. The TPDxEUSB30/A devices are rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Contact). These devices also offer 5 A (8/20 µs) peak pulse current ratings per IEC 61000-4-5 (Surge) specification.
The TPD2EUSB30A offers low 4.5-V DC break-down voltage. The low capacitance, low break-down voltage, and low dynamic resistance make the TPD2EUSB30A a superior protection device for high-speed differential IOs.
The TPD2EUSB30 and TPD2EUSB30A are offered in space saving DRT (1 mm × 1 mm) package. The TPD4EUSB30 is offered in space saving DQA (2.5 mm × 1.0 mm) package. | General Purpose | 8 V | 45 W | Zener | Surface Mount | 3-SMD, SOT-23-3 Variant | SOT-3 | 1 A | 4.5 V | 2 | 3.6 V | 85 °C | -40 °C | |
Texas Instruments TPD2EUSB30DRTRThe TPD2EUSB30, TPD2EUSB30A, and TPD4EUSB30 are 2 and 4 channel Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode arrays. The TPDxEUSB30/A devices are rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Contact). These devices also offer 5 A (8/20 µs) peak pulse current ratings per IEC 61000-4-5 (Surge) specification.
The TPD2EUSB30A offers low 4.5-V DC break-down voltage. The low capacitance, low break-down voltage, and low dynamic resistance make the TPD2EUSB30A a superior protection device for high-speed differential IOs.
The TPD2EUSB30 and TPD2EUSB30A are offered in space saving DRT (1 mm × 1 mm) package. The TPD4EUSB30 is offered in space saving DQA (2.5 mm × 1.0 mm) package.
The TPD2EUSB30, TPD2EUSB30A, and TPD4EUSB30 are 2 and 4 channel Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode arrays. The TPDxEUSB30/A devices are rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Contact). These devices also offer 5 A (8/20 µs) peak pulse current ratings per IEC 61000-4-5 (Surge) specification.
The TPD2EUSB30A offers low 4.5-V DC break-down voltage. The low capacitance, low break-down voltage, and low dynamic resistance make the TPD2EUSB30A a superior protection device for high-speed differential IOs.
The TPD2EUSB30 and TPD2EUSB30A are offered in space saving DRT (1 mm × 1 mm) package. The TPD4EUSB30 is offered in space saving DQA (2.5 mm × 1.0 mm) package. | General Purpose | 8 V | 45 W | Zener | Surface Mount | 3-SMD, SOT-23-3 Variant | SOT-3 | 5 A | 7 V | 2 | 5.5 V | 85 °C | -40 °C |
Description
General part information
TPD2EUSB30 Series
The TPD2EUSB30, TPD2EUSB30A, and TPD4EUSB30 are 2 and 4 channel Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode arrays. The TPDxEUSB30/A devices are rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Contact). These devices also offer 5 A (8/20 µs) peak pulse current ratings per IEC 61000-4-5 (Surge) specification.
The TPD2EUSB30A offers low 4.5-V DC break-down voltage. The low capacitance, low break-down voltage, and low dynamic resistance make the TPD2EUSB30A a superior protection device for high-speed differential IOs.
The TPD2EUSB30 and TPD2EUSB30A are offered in space saving DRT (1 mm × 1 mm) package. The TPD4EUSB30 is offered in space saving DQA (2.5 mm × 1.0 mm) package.
Documents
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