BCR185SE6327BTSA1

Obsolete

Infineon Technologies

TRANS 2PNP PREBIAS 0.25W SOT363

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Obsolete

Infineon Technologies

TRANS 2PNP PREBIAS 0.25W SOT363

Technical Specifications

Parameters and characteristics for this part

Specification	BCR185SE6327BTSA1

Current - Collector (Ic) (Max) [Max]	100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	6-VSSOP, SC-88, SOT-363
Power - Max [Max]	250 mW
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	PG-SOT363-PO
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Transistor Type	Power - Max [Max]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Package / Case	Vce Saturation (Max) @ Ib, Ic	Resistor - Emitter Base (R2)	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]
Infineon Technologies BCR185SE6327BTSA1	2 PNP - Pre-Biased (Dual)	250 mW	200 MHz	100 mA	PG-SOT363-PO	6-VSSOP SC-88 SOT-363	300 mV	47000 Ohms	Surface Mount	70	50 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 250mW Surface Mount PG-SOT363-PO

Technical documentation and resources

No documents available