E4D20120A

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Wolfspeed

DIODE SIL CARB 1.2KV 54.5A TO220

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Wolfspeed

DIODE SIL CARB 1.2KV 54.5A TO220

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General part information

Diode 1200 V 54.5A Through Hole TO-220-2

Technical documentation and resources

Parameters and characteristics commom to parts in this series

Specification	E4D20120A	E4D20120 Series

Capacitance @ Vr, F	1500 pF	1500 pF
Current - Average Rectified (Io)	54.5 A	54.5 A
Current - Average Rectified (Io) (per Diode)	-	33 A
Current - Reverse Leakage @ Vr	200 µA	200 µA
Diode Configuration	-	1 Pair Common Anode
Grade	Automotive	Automotive
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction [Max]	175 ░C	175 ░C
Operating Temperature - Junction [Min]	-55 C	-55 C
Package / Case	TO-220-2	TO-220-2, TO-247-3
Qualification	AEC-Q101	AEC-Q101
Reverse Recovery Time (trr)	0 ns	0 ns
Speed	No Recovery Time	No Recovery Time
Supplier Device Package	TO-220-2	TO-220-2, TO-247-3
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V	1.8 V

DIODE SIL CARB 1.2KV 54.5A TO220

Part	Current - Reverse Leakage @ Vr	Supplier Device Package	Grade	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Mounting Type	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Qualification	Package / Case	Capacitance @ Vr, F	Diode Configuration	Current - Average Rectified (Io) (per Diode)
Wolfspeed E4D20120A	200 µA	TO-220-2	Automotive	1.2 kV	No Recovery Time	1.8 V	54.5 A	Through Hole	SiC (Silicon Carbide) Schottky	175 ░C	-55 C	0 ns	AEC-Q101	TO-220-2	1500 pF
Wolfspeed E4D20120D	200 µA	TO-247-3	Automotive	1.2 kV	No Recovery Time	1.8 V		Through Hole	SiC (Silicon Carbide) Schottky	175 ░C	-55 C	0 ns		TO-247-3		1 Pair Common Anode	33 A