CMH05(TE12L,Q,M)

Obsolete

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 1A M-FLAT

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Obsolete

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 1A M-FLAT

Technical Specifications

Parameters and characteristics for this part

Specification	CMH05(TE12L,Q,M)

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SOD-128
Speed	200 mA, 500 ns
Supplier Device Package	M-FLAT (2.4x3.8)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Speed	Mounting Type	Current - Average Rectified (Io)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Technology
Toshiba Semiconductor and Storage CMH05(TE12L,Q,M)	200 mA 500 ns	Surface Mount	1 A	M-FLAT (2.4x3.8)	400 V	1.3 V	SOD-128	150 °C	-40 °C	10 µA	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 400 V 1A Surface Mount M-FLAT (2.4x3.8)

Technical documentation and resources