IXGK82N120A3

Active

IXYS

TRANSISTOR: IGBT; GENX3™; 1.2KV; 82A; 1.25KW; TO264

Search across all available documentation for this part.

Active

IXYS

TRANSISTOR: IGBT; GENX3™; 1.2KV; 82A; 1.25KW; TO264

Technical Specifications

Parameters and characteristics for this part

Specification	IXGK82N120A3

Current - Collector (Ic) (Max) [Max]	260 A
Current - Collector Pulsed (Icm)	580 A
Gate Charge	340 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power - Max [Max]	1250 W
Supplier Device Package	TO-264 (IXGK)
Switching Energy	12.5 mJ, 5.5 mJ
Td (on/off) @ 25°C	34 ns, 265 ns
Test Condition	15 V, 600 V, 80 A, 2 Ohm
Vce(on) (Max) @ Vge, Ic	2.05 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Td (on/off) @ 25°C	Supplier Device Package	Test Condition	Operating Temperature [Min]	Operating Temperature [Max]	Switching Energy	Gate Charge	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Package / Case	IGBT Type	Power - Max [Max]
IXYS IXGK82N120A3	34 ns 265 ns	TO-264 (IXGK)	2 Ohm 15 V 80 A 600 V	-55 °C	150 °C	5.5 mJ 12.5 mJ	340 nC	2.05 V	580 A	1200 V	Through Hole	260 A	TO-264-3 TO-264AA	PT	1250 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT PT 1200 V 260 A 1250 W Through Hole TO-264 (IXGK)

Technical documentation and resources

No documents available