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MT47H256M8EB-25E:C - MT47H256M8EB-25E( IT):C

MT47H256M8EB-25E:C

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Micron Technology Inc.

DDR DRAM, 256MX8, 0.4NS, CMOS, PBGA60, 9 X 11.50 MM, ROHS COMPLIANT, FBGA-60

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MT47H256M8EB-25E:C - MT47H256M8EB-25E( IT):C

MT47H256M8EB-25E:C

Active
Micron Technology Inc.

DDR DRAM, 256MX8, 0.4NS, CMOS, PBGA60, 9 X 11.50 MM, ROHS COMPLIANT, FBGA-60

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationMT47H256M8EB-25E:C
Access Time400 ps
Clock Frequency400 MHz
Memory FormatDRAM
Memory InterfaceParallel
Memory Organization256M x 8
Memory Size2 Gbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]0 °C
Package / Case60-TFBGA
Supplier Device Package60-FBGA (9x11.5)
TechnologySDRAM - DDR2
Voltage - Supply [Max]1.9 V
Voltage - Supply [Min]1.7 V
Write Cycle Time - Word, Page15 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 12.65
10$ 11.23
25$ 10.71
40$ 10.46
80$ 10.09
230$ 9.55
440$ 9.51

Description

General part information

MT47H256M8 Series

SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 60-FBGA (9x11.5)

Documents

Technical documentation and resources