Specification	HAT2096H-EL-E

Current - Continuous Drain (Id) (Ta)	40 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	40 nC
Input Capacitance (Ciss) (Max)	2200 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK
Power Dissipation (Max)	20 W
Rds On (Max)	5.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

HAT2096 Series

Part	Operating Temperature	Gate Charge (Max)	Rds On (Max)	Package / Case	Technology	Vgs (Max)	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	FET Type	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)
Renesas Electronics Corporation HAT2096H-EL-E	150 °C	40 nC	5.3 mOhm	SC-100 SOT-669	MOSFET (Metal Oxide)	20 V	Surface Mount	20 W	30 V	10 V	4.5 V	LFPAK	N-Channel	40 A	2200 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources