BSP317PE6327

Obsolete

Infineon Technologies

MOSFET P-CH 250V 430MA SOT223-4

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Obsolete

Infineon Technologies

MOSFET P-CH 250V 430MA SOT223-4

Technical Specifications

Parameters and characteristics for this part

Specification	BSP317PE6327

Current - Continuous Drain (Id) @ 25°C	430 mA
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	15.1 nC
Input Capacitance (Ciss) (Max) @ Vds	262 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.8 W
Rds On (Max) @ Id, Vgs	4 Ohm
Supplier Device Package	PG-SOT223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id
Infineon Technologies BSP317PE6327	Surface Mount	430 mA	1.8 W	262 pF	4.5 V 10 V	MOSFET (Metal Oxide)	4 Ohm	P-Channel	PG-SOT223-4	20 V	250 V	15.1 nC	-55 °C	150 °C	TO-261-4 TO-261AA	2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 250 V 430mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Technical documentation and resources