
IPT059N15N3ATMA1
ActiveOPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; TOLL HSOF-8 PACKAGE; 5.9 MOHM;
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IPT059N15N3ATMA1
ActiveOPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; TOLL HSOF-8 PACKAGE; 5.9 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPT059N15N3ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 155 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 8 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 7200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerSFN |
| Power Dissipation (Max) [Max] | 375 W |
| Rds On (Max) @ Id, Vgs | 5.9 mOhm |
| Supplier Device Package | PG-HSOF-8-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPT059 Series
Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.
Documents
Technical documentation and resources