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IPT059N15N3ATMA1 - INFINEON IPT059N15N3ATMA1

IPT059N15N3ATMA1

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Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; TOLL HSOF-8 PACKAGE; 5.9 MOHM;

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Search across all available documentation for this part.

IPT059N15N3ATMA1 - INFINEON IPT059N15N3ATMA1

IPT059N15N3ATMA1

Active
Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; TOLL HSOF-8 PACKAGE; 5.9 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPT059N15N3ATMA1
Current - Continuous Drain (Id) @ 25°C155 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)8 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs92 nC
Input Capacitance (Ciss) (Max) @ Vds7200 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerSFN
Power Dissipation (Max) [Max]375 W
Rds On (Max) @ Id, Vgs5.9 mOhm
Supplier Device PackagePG-HSOF-8-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 8.89
10$ 6.09
100$ 4.50
500$ 4.07
Digi-Reel® 1$ 8.89
10$ 6.09
100$ 4.50
500$ 4.07
Tape & Reel (TR) 2000$ 4.07
NewarkEach (Supplied on Cut Tape) 1$ 6.45
10$ 4.34
25$ 4.24
50$ 4.16
100$ 4.07

Description

General part information

IPT059 Series

Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.

Documents

Technical documentation and resources