STS3DNE60L

Obsolete

STMicroelectronics

MOSFET 2N-CH 60V 3A 8SOIC

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Obsolete

STMicroelectronics

MOSFET 2N-CH 60V 3A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	STS3DNE60L

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	13.5 nC
Input Capacitance (Ciss) (Max) @ Vds	815 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	FET Feature	Power - Max [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Configuration	Mounting Type	Operating Temperature	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STS3DNE60L	Logic Level Gate	2 W	8-SOIC	13.5 nC	80 mOhm	2 N-Channel (Dual)	Surface Mount	150 °C	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	60 V	1 V	3 A	815 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 60V 3A 2W Surface Mount 8-SOIC

Technical documentation and resources